THIN FILM PROCESSING METHOD AND APPARATUS USING FLUORINE RADICAL, AND SUPERCONDUCTING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a thin film processing method and apparatus for stably controlling film thickness to the desired several nm by controlling deterioration of thin film characteristic resulting from the etching process, and also to provide a superconducting structure. SOLUTION: For the etching process of the thin film surface of a sample prepared within a sealed chamber, an electrically neutral fluorine radical is used as an etching seed. The sample and ion source are indirectly placed face to face by locating a shielding means to the front area of the ion source keeping a certain gap. The sample surface is processed up to the desired thinner thickness of several nm without giving ion shock by diffusing the fluorine radical from the gap between the ion source and shielding means in accordance with the concentration distribution until the radical reaches the sample. It is also possible that a pattern for measuring thin film resistance is generated previously and a thin film resistance of sample is measured during the etching process to monitor the remaining amount of film. COPYRIGHT: (C)2005,JPO&NCIPI