发明名称 |
Method for forming a self-aligned buried strap in a vertical memory cell |
摘要 |
A method for forming a self-aligned buried strap in a vertical memory cell. A semiconductor substrate with a trench is provided. A collar dielectric layer is conformally formed on the trench bottom portion, and the trench is filled with a conducting layer. The collar dielectric layer is etched below the level of the surface of the conducting layer to form a groove between the conducting layer and the trench. The groove is filled with a doped conducting layer. The dopant in the doped conducting layer is diffused to the semiconductor substrate in an ion diffusion area as a buried strap. The conducting layer and the doped conducting layer are etched below the ion diffusion area. A top trench insulating layer is formed on the bottom of the trench, wherein the top trench insulating layer is lower than the ion diffusion area.
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申请公布号 |
US2005124111(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040846321 |
申请日期 |
2004.05.14 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HUANG CHENG-CHIH;YANG SHENG-WEI;SHIH NENG-TAI;HUANG CHEN-CHOU |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/823;H01L21/823;H01L21/824;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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