High light efficiency of GaN-series of light emitting diode and its manufacturing method thereof

摘要

A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.