HIGH PRECISION INTEGRATED CIRCUIT CAPACITOR

摘要

PROBLEM TO BE SOLVED: To produce a high precision integrated circuit capacitor using an electrode made of polysilicon and titanium nitride. SOLUTION: The polysilicon layer (30) is formed on a dielectric region (20). A metal silicide layer (50) may be formed on the polysilicon layer as an option. A dielectric layer (60) is formed so as to cover the metal silicide layer and a conductive layer (70) is formed so as to cover the dielectric layer. These formed layers are etched by multistage dry and wet processes to form a high precision integrated circuit. COPYRIGHT: (C)2005,JPO&NCIPI