METHOD OF FORMING INSULATING FILM, PIEZOELECTRIC DEVICE, FERROELECTRIC DEVICE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming insulating film and the like, by which insulating films having desired planar forms and high insulation characteristics can be formed easily and inexpensively. SOLUTION: High-affinity areas A1 and low-affinity areas A2 are formed on a substrate 10, such as single-crystal silicon substrate, by forming self-organizing monomolecular films 12a on the substrate 10. Then the insulating films 14 having desired planar forms are formed only in the high-affinity areas A1, by supplying an insulating material to the regions A1. COPYRIGHT: (C)2005,JPO&NCIPI