发明名称 |
Shallow trench isolation dummy pattern and layout method using the same |
摘要 |
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
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申请公布号 |
US2005112840(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040993937 |
申请日期 |
2004.11.19 |
申请人 |
DOONG KELVIN YIH-YUH;HSIA CHIN-CHIU |
发明人 |
DOONG KELVIN YIH-YUH;HSIA CHIN-CHIU |
分类号 |
H01L21/3105;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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