Semiconductor component with field stop layer with p or n channel transistor has transistor gate arranged so potential exists between gate, bounding part of spatial charging zone area to cause a current to flow through field stop layer

摘要

The device (1A) has a spatial charging zone area (5) and a field stop layer (4) with at least part of a p or n channel transistor for limiting a spatial charging zone that can be formed in the spatial charging zone area. The transistor's gate (14,19) is in direct contact with the spatial charging zone area. It is arranged so that a large enough potential exists between the gate and the bounding part of the spatial charging zone area to switch the p or n channel (15,16) of the transistor to cause a current to flow via the channel through the field stop layer.