| 摘要 |
The present invention relates to a method for forming a metal wire in a semiconductor device. The method comprises the steps of forming a lower metal wire on a semiconductor substrate, depositing an insulating film on the lower metal wire, forming a damascene etch pattern in the insulating film, depositing a conductive material on the insulating film so that the conductive material fills the damascene etch pattern, thus forming a conductive layer including step portions, depositing, on the conductive layer, a material having a high etch selective ratio against the conductive material, thus forming an anti-etch film, stripping a part of the anti-etch film by means of a CMP process until the conductive layer is exposed, striping a portion of the conductive layer by means of an etch process using the anti-etch film as an etch mask, and stripping the remaining anti-etch film and conductive layer by means of a CMP process, thus forming a conductive wire with which the damascene etch pattern is filled. Therefore, a large amount of slurry and the usage of a pad depending on a long-time polishing in a CMP process can be reduced. It is thus possible to save a process cost price in development and production of a semiconductor device.
|
