| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic cell for which there is no element destruction and has a high probability of expressing MR characteristics and has little variations, and to provide a magnetic memory having the same. SOLUTION: The magnetic cell comprises a bottom electrode 4, conductive pillar 6a formed on top of the bottom electrode, magneto-resistance effect film 12 which is formed on top of the conductive pillar and consists of two or more ferromagnetic layers and an intermediate layer formed between the ferromagnetic layers, top electrode 20 formed on top of the magneto-resistance effect film, support layer 12A which is formed of at least one metal and is formed on a side face of the conductive pillar, either directly or via an insulation layer, and current diffusion preventing layer 10 formed between the support layer and the bottom electrode. The magnetic cell is so structured as to satisfy a relation expression, as shown in Figure, where h is a height of the conductive pillar, t1 is the thickness of the current diffusion preventing layer, t2 is the thickness of the support layer, and L (nm) is the length in the short side direction of the element. COPYRIGHT: (C)2005,JPO&NCIPI
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