| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition for an electron beam, X-ray or EUV ray which enhances sensitivity and resolution and improves the shape of a line edge part (line edge roughness). <P>SOLUTION: The positive photoresist composition for an electron beam, X-ray or EUV ray contains: a resin which has an acid decomposable group with a specified structure, is decomposed by the action of an acid and of which solubility into an alkali developer is increased thereby; and a compound which generates an acid by irradiation of an electron beam, X-ray or EUV ray. The pattern forming method uses the positive photoresist composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
