发明名称 Barrier polishing fluid
摘要 <p>The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.</p>
申请公布号 EP1520894(A1) 申请公布日期 2005.04.06
申请号 EP20040255561 申请日期 2004.09.14
申请人 ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 发明人 BIAN, JINRU
分类号 B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/321;(IPC1-7):C09G1/02 主分类号 B24B37/00
代理机构 代理人
主权项
地址