| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress or prevent the separation of an insulation film in a mostupper wiring layer of a semiconductor integrated circuit device. <P>SOLUTION: First, in the mostupper third wiring layer, third layer wiring 11L3, each consisting of a laminated film of conductive films 11a-11c, are formed by photolithography or dry etching technique. Each of the conductive films 11a and 11c consists of a laminated film which is such that titanium nitride is deposited on titanium, while the conductive film 11b consists of an aluminum-based conductive film. Then, after an insulation film 20 is so deposited by plasma CVD method as to cover the third layer interconnections 11L3, another insulation film 15c is deposited by HDP-CVD method on top of the insulation film 20 to completely fill in spaces between adjacent interconnections of the third layer interconnections 11L3. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
