发明名称 LIFT-OFF APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a lift-off apparatus wherewith yield reduction or facility troubles due to pollution of wafers and facilities is suppressed in an IPA high-pressure jet-spray treatment. SOLUTION: A cover 5 is provided near the rear side of a wafer 1 in a lift-off treatment cup 4, and the gap between the cover 5 and the rear side of the wafer 1 is filled with IPA 105. Pollution by metal fragments 103a or resist fragments 102a is effectively reduced by using this design, and this increases the yield and decreases facility troubles. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072430(A) 申请公布日期 2005.03.17
申请号 JP20030302589 申请日期 2003.08.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHIMURA NORIO
分类号 H01L21/28;H01L21/3065;H01L21/3205;(IPC1-7):H01L21/320;H01L21/306 主分类号 H01L21/28
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