| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein sufficient current does not flow, if a metal electrode layer becomes thinner, to the entire part of the metal electrode layer, when a voltage is applied to the electrode, because the resistance value of the metal electrode layer in the direction parallel to the same layer becomes relatively larger than that of the same layer in the direction perpendicular to the metal electrode layer, in order to realize highly efficient extraction of light beam in a semiconductor light emitting element formed of a gallium-nitride system compound semiconductor. <P>SOLUTION: An superlattice layer is provided between the metal electrode layer and active layer of the semiconductor light emitting element in order to improve extraction efficiency of the light emitted from the active layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
