发明名称 |
Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitry |
摘要 |
A semiconductor integrated circuit device has a MISFET and a body biasing circuit. The MISFET has a source electrode and a drain electrode of a first conductivity type and a gate electrode, and the MISFET is formed in a well of a second conductivity type. The body biasing circuit generates a voltage in the well by passing a prescribed current in a forward direction into a diode which is formed from the well and the source electrode of the MISFET.
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申请公布号 |
US6864539(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030618710 |
申请日期 |
2003.07.15 |
申请人 |
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER |
发明人 |
ISHIBASHI KOICHIRO;YAMASHITA TAKAHIRO |
分类号 |
H01L27/02;H01L27/07;H01L27/092;H03K17/041;H03K19/003;H03K19/017;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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