SEMICONDUCTOR DEVICE WITH COBALT CAPPING LAYER FOR IMPROVING VIA RESISTANCE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve via resistance by using a cobalt film or a predetermined layer composed of the cobalt film and a titanium nitride layer as a capping layer of a metal film. CONSTITUTION: A semiconductor device includes a semiconductor substrate(100), a lower capping layer(110) on the substrate, a metal film(104) on the lower capping layer, an upper capping layer(102) for covering completely the metal film, and an insulating pattern(106) with a contact plug(108) on the upper capping layer. The upper capping layer includes at least a cobalt film.