| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element wherein light extraction efficiency or optical absorption efficiency is improved. <P>SOLUTION: A lower surface 7 of an N-type GaN layer 5 which is exfoliated from a substrate 1 is constituted of voids 6 and an exfoliated surface 3b which is formed by exfoliating a part of a GaN layer 2 which constitutes convex parts 3 from the substrate 1. Since the lower surface 7 is an un-flat surface which is constituted of the exfoliated surface 3b which is made into an almost flat surface and the voids 6 which have a recessed shape to the exfoliated surface 3b, total reflection of light generated from an InGaN layer 8 which is made into a light emitting layer is hardly carried out by the lower surface 7, and light extraction efficiency of the element can be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
