发明名称 METHOD AND EQUIPMENT FOR SOFT PLASMAENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) OF DIELECTRIC FILM
摘要 PROBLEM TO BE SOLVED: To improve aging properties of a semiconductor component. SOLUTION: A grid 17 is interposed between a plasma and a substrate 15 when a passivation layer is formed on the substrate 15 by exposing the substrate 15 in a vacuum to a flow of particles which were generated by plasmaenhanced chemical vapor deposition, thereby reducing the flow of charged particles towards the substrate 15 while conserving the flow of neutral particles. The grid 17 is also used at least at the beginning of deposition, and is formed of metal wires that are crossed at a pitch that is less than two or three times the Debye length (λD) of the plasma used. The aging properties of semiconductor components are thereby improved. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005057267(A) 申请公布日期 2005.03.03
申请号 JP20040218509 申请日期 2004.07.27
申请人 ALCATEL 发明人 JANY CHRISTOPHE;PUECH MICHEL
分类号 H01L21/31;C23C16/34;C23C16/452;H01L21/318;(IPC1-7):H01L21/318 主分类号 H01L21/31
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