发明名称 |
Non-volatile dynamic random access memory |
摘要 |
A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.
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申请公布号 |
US2005047194(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030749297 |
申请日期 |
2003.12.31 |
申请人 |
AHN JIN-HONG;HONG SANG-HOON;PARK YOUNG-JUNE;LEE SANG-DON;KIM YIL-WOOK;BAE GI-HYUN |
发明人 |
AHN JIN-HONG;HONG SANG-HOON;PARK YOUNG-JUNE;LEE SANG-DON;KIM YIL-WOOK;BAE GI-HYUN |
分类号 |
G11C16/04;G11C11/24;G11C11/404;G11C14/00;H01L21/8242;H01L27/105;H01L27/108;(IPC1-7):G11C11/24 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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