| 发明名称 |
Device having multiple silicide types and a method for its fabrication |
| 摘要 |
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.
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| 申请公布号 |
US2005045965(A1) |
申请公布日期 |
2005.03.03 |
| 申请号 |
US20040831021 |
申请日期 |
2004.04.23 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHUN-CHIEH;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUAN-YI;HU CHENMING |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L21/8238;H01L27/092;H01L29/43;H01L29/45;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
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