METHOD OF FORMING Al LINE OF SEMICONDUCTOR DEVICE FOR RESTRICTING BRIDGE BETWEEN ADJACENT ALUMINUM LINES

摘要

PURPOSE: A method of forming Al line of semiconductor device is provided to restrict a bridge between adjacent aluminum lines by preventing degradation of morphology characteristics due to the grooving on a PVD aluminum layer though exposing an aluminum seed layer formed on a target substrate. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate having a conductive pattern. A contact hole is formed by patterning the interlayer dielectric. A barrier metal layer is formed on the interlayer dielectric and the conductive pattern along a step of a resultant structure. An aluminum seed layer is formed by using a CVD method on the barrier metal layer(S23). The aluminum seed layer is cleaned. An aluminum layer is formed on the aluminum seed layer by using a PVD method(S25). A reflow process for the PVD aluminum layer is performed(S26).