Solid-state imaging device, method for manufacturing the same, and method for driving the same

摘要

In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P<->-type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlayer insulation film interposed therebetween. By applying a negative voltage to the light-blocking film and the transparent conductive film, a P<++>-type inversion region is formed in a topmost part of the N-type photoelectric conversion region.