发明名称 |
Semiconductor device with selectable gate thickness and method of manufacturing such devices |
摘要 |
A method of forming layers, in the same device material, with different thickness or layer height in a semiconductor device comprises forming device material layer or gate electrode layer disposable parts in selected regions of the device layer. The disposable parts can be formed by doping the selected regions to the desired depth d. The as-deposited thickness t of this device layer can be adjusted or modulated after the patterning of the individual devices by removing the disposable parts.
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申请公布号 |
US6855605(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20020286427 |
申请日期 |
2002.10.30 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) |
发明人 |
JURCZAK MALGORZATA;ROOYACKERS RITA;AUGENDRE EMMANUEL;BADENES GONCAL |
分类号 |
H01L21/28;H01L21/3215;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823;H01L21/320;H01L21/425;H01L29/76;H01L31/062 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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