SYSTEM AND METHOD FOR PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To suppress the attachment of foreign matters to a substrate to treat without deteriorating the etching properties in a plasma treatment to etch an organic film. SOLUTION: In a plasma etching system wherein the organic film is etched, a semiconductor ring is arranged in the periphery of the substrate to be treated and a bias voltage is applied to the ring. COPYRIGHT: (C)2005,JPO&NCIPI