| 摘要 |
A method for forming capacitor of semiconductor device wherein a stacked structure of Al-rich HfO2-Al2O3 film and Hf-rich HfO2-Al2O3 film or a stacked structure of Al2O3 film and Hf-rich HfO2-Al2O3 film is used as a dielectric film is disclosed. The method comprises (a) forming an oxide film on an interlayer insulating film having a storage electrode contact plug; (b) selectively etching the oxide film to form an opening exposing the top surface of the storage electrode contact plug; (c) forming a conductive layer on the bottom and the inner walls of the opening; (d) removing the oxide film to form a storage electrode; (e) forming a dielectric film having a stacked structure of Al-rich HfO2-Al2O3 film and Hf-rich HfO2-Al2O3 film on the surface of the storage electrode; (f) annealing the dielectric film; and (g) forming a plate electrode on the dielectric film.
|
