发明名称 |
ION BEAM IRRADIATION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an ion beam irradiation device which is equipped with an electron source that can generate large amount of electrons of low energy by a drawing voltage lower than the conventional technology as an electron source for charge suppression of the treatment body. SOLUTION: This ion beam irradiation device comprises a field emission type electron source 10 which is arranged at the side of a passage of an ion beam 2 on the upstream side of a holder 6 and emits electrons 22 into the passage of the ion beam 2 and a drawing-out power supply 30 for it. This field emission electron source 10 has a large number of minute emitters having a tip with sharpened profile formed on the conductive substrate 12 and a gate electrode 18 surrounding the vicinity of the tip of each emitter 14 with a minute gap, and an insulating layer for insulating between the gate electrode 18 and the substrate 12. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005026189(A) |
申请公布日期 |
2005.01.27 |
申请号 |
JP20030270658 |
申请日期 |
2003.07.03 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;NISSIN ION EQUIPMENT CO LTD |
发明人 |
ISHIKAWA JUNZO;KANAMARU MASATAKE;NAGAO MASAYOSHI;IKEJIRI TADASHI;SAKAI SHIGEKI |
分类号 |
C23C14/48;H01J37/073;H01J37/20;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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