发明名称 ION BEAM IRRADIATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion beam irradiation device which is equipped with an electron source that can generate large amount of electrons of low energy by a drawing voltage lower than the conventional technology as an electron source for charge suppression of the treatment body. SOLUTION: This ion beam irradiation device comprises a field emission type electron source 10 which is arranged at the side of a passage of an ion beam 2 on the upstream side of a holder 6 and emits electrons 22 into the passage of the ion beam 2 and a drawing-out power supply 30 for it. This field emission electron source 10 has a large number of minute emitters having a tip with sharpened profile formed on the conductive substrate 12 and a gate electrode 18 surrounding the vicinity of the tip of each emitter 14 with a minute gap, and an insulating layer for insulating between the gate electrode 18 and the substrate 12. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005026189(A) 申请公布日期 2005.01.27
申请号 JP20030270658 申请日期 2003.07.03
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;NISSIN ION EQUIPMENT CO LTD 发明人 ISHIKAWA JUNZO;KANAMARU MASATAKE;NAGAO MASAYOSHI;IKEJIRI TADASHI;SAKAI SHIGEKI
分类号 C23C14/48;H01J37/073;H01J37/20;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 C23C14/48
代理机构 代理人
主权项
地址