发明名称 |
Method of smoothing a trench sidewall after a deep trench silicon etch process |
摘要 |
Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises exposing the silicon trench sidewall to a plasma generated from a fluorine-containing gas, at a process chamber pressure within the range of about 1 mTorr to about 30 mTorr, for a time period within the range of about 10 seconds to about 600 seconds. A substrate bias voltage within the range of about -10 V to about -40 V is applied during the performance of the post-etch treatment method of the invention.
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申请公布号 |
US6846746(B2) |
申请公布日期 |
2005.01.25 |
申请号 |
US20020137543 |
申请日期 |
2002.05.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RATTNER MICHAEL;CHINN JEFFREY D. |
分类号 |
B81C1/00;H01L21/3065;(IPC1-7):H01L21/302 |
主分类号 |
B81C1/00 |
代理机构 |
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主权项 |
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地址 |
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