| 摘要 |
PROBLEM TO BE SOLVED: To provide a Hall element wherein the variations of unbalanced voltage are less and not fluctuated against temperature change, and to provide a manufacturing method thereof. SOLUTION: A porous resin layer (7) is provided between a Hall element chip (2) and a sealing resin (8), and an air gap (9) is formed between the surface of the Hall element chip (2) and the porous resin layer (7). Further, a solid air gap forming member (6a) is applied to coat the surface of the Hall element chip (2), the solid air gap forming member (6a) and the Hall element chip (2) are coated by a thermosetting foaming resin (7c) before curing, the solid air gap forming member (6a) is vaporized and removed by temperature rise to form the air gap (9) with a shape of the solid air gap forming member (6a), and foaming and curing the thermosetting foaming resin (7c) forms the porous resin layer (7). Moreover, water is employed as the air gap forming member (6). COPYRIGHT: (C)2005,JPO&NCIPI
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