发明名称 |
METHOD FOR FORMING BURIED PLATE OF TRENCH CAPACITOR |
摘要 |
A method for forming a buried plate in a trench capacitor is disclosed. The trench is completely filled with a dopant source material such as ASG. The dopant source material is then recessed and the collar material is deposited to form the collar in the upper portion of the trench. After drive-in of the dopants to form the buried plate, the dopant source material is removed and the collar materials may be removed.
|
申请公布号 |
US2005009268(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030604081 |
申请日期 |
2003.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DIVAKARUNI RAMACHANDRA |
分类号 |
H01L27/108;H01L21/02;H01L21/3215;H01L21/8242;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|