| 摘要 |
<p>The invention seeks to provide an organic thin film transistor whose threshold voltage can be easily controlled without changing the material forming an organic semiconductor film, and a method of manufacturing the same. An organic thin film transistor includes a gate electrode 12, a gate insulating film 14, a source electrode 16, a drain electrode 18, and an organic semiconductor film 20, and has a threshold voltage controlling film 22 between the gate insulating film 14 and the organic semiconductor film 20.</p> |
