| 发明名称 |
METHOD OF GROWING NON-POLAR A-PLANE OR M-PLANE GALLIUM NITRIDE THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION AND STRUCTURE OBTAINED THEREBY |
| 摘要 |
Non-polar (1120) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (1120) a-plane GaN thin films |
| 申请公布号 |
EP1495168(A1) |
申请公布日期 |
2005.01.12 |
| 申请号 |
EP20030726251 |
申请日期 |
2003.04.15 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CRAVEN, MICHAEL, D.;SPECK, JAMES, S. |
| 分类号 |
C30B25/02;C23C16/04;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L21/02;H01L21/205;H01L33/00;H01S5/343;(IPC1-7):C30B25/02;H01L21/00;H01L21/20 |
主分类号 |
C30B25/02 |
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