| 摘要 |
A means for highly precisely and economically fabricating wiring on a semiconductor and highly precisely and economically forming a bump on an electrodes. (1) A semiconductor device comprising a semiconductor, a metal foil for fabricating wiring and conductor wiring on the semiconductor, and a method of fabricating a conductor wiring circuit on a semiconductor, comprising the steps of laying a metal foil for fabricating wiring on the electrode-forming side of the semiconductor, forming a resist wiring pattern by photo-etching the metal foil, etching the metal foil, and removing the resist to form the wiring. (2) A semiconductor device which comprises a multilayer metal foil for fabricating wiring in place of the metal foil for forming wiring of the semiconductor device described in (1); and a method of fabricating conductor wiring having a bump on a semiconductor, comprising the steps of the method described in (1) and further comprising the steps of forming a resist pattern for forming the bump by photo-etching the multilayer metal foil for forming the wiring, forming a bump by selective etching, and removing an etch-stop layer.
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