CONTACT FORMING METHOD OF SEMICONDUCTOR DEVICE FOR SECURING LOW CONTACT RESISTANCE

摘要

PURPOSE: A contact forming method of a semiconductor device is provided to secure low contact resistance by performing a hydrogen-bake under a predetermined temperature condition. CONSTITUTION: An interlayer dielectric(5) is formed on a semiconductor substrate(1) with gates(3). Contact holes for exposing the substrate between gates are formed in the interlayer dielectric. The resultant structure is loaded into CVD(Chemical Vapor Deposition) equipment. An interfacial oxide layer is removed from the resultant structure by using a hydrogen-bake at a temperature range of 800 or less.