发明名称 |
Bicmos process with low temperature coefficient resistor (TCRL) |
摘要 |
A method for forming a polysilicon resistor with a relatively low temperature coefficient of resistance (TCRL) resistor (141). As a first step, a protective oxide (140) is deposited over the epi layer (11). This layer protects any exposed emitter polysilicon layer (132) from etching when the TCRL regions are defined. A polysilicon layer (142) is deposited in the opening. Next, the polysilicon layer is implanted with a BF2 implant (143). Finally, the TCRL (141) is covered with a photoresist and etched to its suitable size. The TCRL layer (141) is then covered with a protective oxide. The oxide is suitably patterned and masked to protect the underlying portion of the TCRL (141). <IMAGE> |
申请公布号 |
EP1065715(A3) |
申请公布日期 |
2005.01.05 |
申请号 |
EP20000401889 |
申请日期 |
2000.06.30 |
申请人 |
INTERSIL CORPORATION |
发明人 |
HEMMENWAY, DONALD;DELGADO, JOHN;BUTLER, JOHN;RIVOLI, ANTHONY |
分类号 |
H01C7/00;H01C13/00;H01L21/02;H01L21/265;H01L21/3205;H01L21/763;H01L21/822;H01L21/8222;H01L21/8234;H01L21/8248;H01L21/8249;H01L23/52;H01L27/02;H01L27/04;H01L27/06 |
主分类号 |
H01C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|