METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO FORM FINE METAL LINES OF LOW RESISTANCE USING TiN LAYER AS HARD MASK

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to easily form a fine metal line of low resistance by using a TiN layer as a hard mask and by adding oxygen gas in etching of the metal line. CONSTITUTION: An interlayer dielectric(10) is formed on a semiconductor substrate. A barrier metal film(12), an aluminum film(14) and a TiN layer are sequentially formed on the interlayer dielectric. A TiN pattern(16) as a hard mask is formed by selectively etching the TiN layer. A metal line is formed by sequentially etching the Al film and the barrier metal film using the TiN pattern as a mask, wherein O2 gas is added to the etching gas.