发明名称 |
Composite spacer liner for improved transistor performance |
摘要 |
Semiconductor devices with improved transistor performance are fabricated by forming a composite oxide/nitride liner under a gate electrode sidewall spacer. Embodiments include depositing a conformal oxide layer by decoupled plasma deposition, depositing a conformal nitride layer by decoupled plasma deposition, depositing a spacer layer and then etching.
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申请公布号 |
US2004259343(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040824428 |
申请日期 |
2004.04.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BULLER JAMES F.;WU DAVID;LUNING SCOTT;WRISTERS DERICK;KADOSH DANIEL |
分类号 |
H01L21/8238;H01L21/336;H01L27/092;H01L29/49;H01L29/78;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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