METHOD OF FORMING SEMICONDUCTOR DEVICE FOR PREVENTING DAMAGE OF HARD MASK LAYER BY PERFORMING SELF-ALIGNED CONTACT PROCESS USING PHOTORESIST LAYER

摘要

PURPOSE: A method of forming a semiconductor device is provided to prevent damage of a hard mask layer by performing a self-aligned contact process using a photoresist layer. CONSTITUTION: A conductive line having a hard mask layer(15) is patterned on a semiconductor substrate(11). A photoresist pattern is formed by an exposure process and a development process using a landing plug contact mask. An SOG insulating layer(23) is formed on the entire surface in order to bury a landing plug contact hole region. A CMP process for the SOG insulating layer is performed. An exposed part of the photoresist pattern is removed and a lower insulating layer(25) is formed on the entire surface. A landing plug contact hole is formed by etching an upper side of the lower insulating layer and removing an exposed part of the SOG insulating layer. A landing plug for burying the landing plug contact hole is formed.