发明名称 Chemical vapor deposition of titanium
摘要 A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
申请公布号 US6830820(B2) 申请公布日期 2004.12.14
申请号 US20010940980 申请日期 2001.08.28
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ SINGH;WESTMORELAND DONALD L.
分类号 C23C16/02;C23C16/06;H01L21/285;H01L21/44;H01L21/768;(IPC1-7):H01L29/40 主分类号 C23C16/02
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