| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection method by which the edge of a resist pattern is more sharply displayed while an unexposed resist is prevented from exposure when an exposed part of the resist layer is optically inspected after the resist layer on a substrate is exposed or after the exposed resist layer is developed. <P>SOLUTION: In the process of optically inspecting an exposed part of the resist layer after the resist layer on the substrate is exposed or after the exposed resist layer is developed, the wavelength of light used for illumination is specified to 522 to 645 nm. Preferably, if the resist is prepared by using a dry film resist, the resist is irradiated with the light at 522 to 645 nm wavelength from the direction orthogonal to the direction where the dry film is stretched when the resist is stuck to the substrate, and more preferably, the exposed part is photographed by using a line CCD camera. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
