| 摘要 |
PROBLEM TO BE SOLVED: To provide germanium compounds suitable for use as vapor deposition precursors for germanium films, and a method for depositing films containing germanium, using such compounds. SOLUTION: A halogermanium compound as a first germanium compound and other organic germanium compound as a second germanium compound are decomposed within a deposition chamber, so that the films containing germanium are deposited. COPYRIGHT: (C)2005,JPO&NCIPI
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