发明名称 Integrating chip scale packaging metallization into integrated circuit die structures
摘要 Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described.
申请公布号 US2004245631(A1) 申请公布日期 2004.12.09
申请号 US20030453157 申请日期 2003.06.03
申请人 MICREL, INCORPORATED 发明人 ALTER MARTIN
分类号 H01L21/60;H01L23/31;H01L23/485;(IPC1-7):H01L23/48;H01L23/52 主分类号 H01L21/60
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