发明名称 VACUUM MICRO-DEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To easily provide a vacuum micro-device such as a field emitting type cold cathode having a gate electrode structure having high rigidity by forming a structure that a second electrode becomes thick as it separates from a pointed shape part of a first electrode. SOLUTION: In a vacuum micro-device, an emitter electrode 11 of a first electrode is adhered on a structural base board 10. A tip pointed shape part is arranged on one main surface different from a surface adhered to the base board 10 of the emitter electrode 11. A gate electrode 13 of a second electrode is formed on this surface through an insulating film 12. The insulating film 12 to cover the emitter electrode 11 in the vicinity of the pointed tip of the emitter electrode 11 is removed in a part of this area, and the pointed tip of the emitter electrode 11 is exposed, and an electric current radiating area 14 is formed. The gate electrode 13 of the second electrode is arranged in this area 14 so that a thickness becomes thick in the direction for separating from the pointed shape part of the emitter electrode 11 by surrounding the pointed tip of the emitter electrode 11.</p>
申请公布号 JPH09259740(A) 申请公布日期 1997.10.03
申请号 JP19960071904 申请日期 1996.03.27
申请人 NEC CORP 发明人 SUZUKI KENICHIRO
分类号 H01J9/02;H01J1/304;H01J3/02;(IPC1-7):H01J1/30;H01J19/24 主分类号 H01J9/02
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