| 摘要 |
<p>A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500 DEG C or less by setting an electron temperature of the microwave-excited plasma to 2eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less. <IMAGE></p> |
