| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a TFT, or the like, having a good performance even on a flexible substrate. SOLUTION: In the semiconductor device having a semiconductor formed on a flexible substrate 1 of metal or resin, amorphous silicon 2 is placed on the flexible substrate 1 and insular polysilicon 3 is arranged thereon. In order to prevent the substrate from warping, an amorphous silicon layer is provided on the opposite sides of the flexible substrate. Amorphous silicon 2 is formed on the flexible substrate 1 of metal or resin and its surface is polysiliconized by laser anneal using an XeCl excimer laser, or the like. COPYRIGHT: (C)2005,JPO&NCIPI |
