| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor wherein carrier mobility can be improved. SOLUTION: The field-effect transistor is provided with at least (A) a channel formation region 18 formed in a semiconductor layer 17, and (B) a gate electrode 12 which is arranged in face to face with the channel formation region 18 through a gate insulating layer 13. In the semiconductor layer 17, a semiconductor material layer 15 and conductive particles 16 are intermingled. COPYRIGHT: (C)2005,JPO&NCIPI
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