| 发明名称 |
SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.</p> |
| 申请公布号 |
WO2004100268(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
WO2004JP06176 |
申请日期 |
2004.04.28 |
| 申请人 |
CANON KABUSHIKI KAISHA;YONEHARA, TAKAO |
发明人 |
YONEHARA, TAKAO |
| 分类号 |
H01L21/02;H01L21/20;H01L21/762;H01L27/12;(IPC1-7):H01L27/12;H01L21/76 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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