发明名称 |
Semiconductor memory device and its manufacturing method |
摘要 |
A first impurity diffusion area is formed in the semiconductor substrate at a bottom of the first trench formed in a surface of the semiconductor substrate. A second impurity diffusion area is formed in the surface of the semiconductor substrate, each have one end contacting a first side wall of the first trench, and each have the same conductive type as the first impurity diffusion area. A first gate electrode is provided on the first side wall between the first and second impurity diffusion areas with a gate insulating film interposed therebetween. A first ferroelectric film is provided on a first lower electrode, which is provided on the second impurity area. A first upper electrode is provided on the first ferroelectric film. A first interconnection layer is provided above the first upper electrode. A first contact plug electrically connects the first interconnection layer and first impurity diffusion area.
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申请公布号 |
US2004227171(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20030620698 |
申请日期 |
2003.07.17 |
申请人 |
WATANABE SHINICHI;MORIMOTO TOYOTA;OZAKI TOHRU;KOYAMA HARUHIKO |
发明人 |
WATANABE SHINICHI;MORIMOTO TOYOTA;OZAKI TOHRU;KOYAMA HARUHIKO |
分类号 |
H01L27/105;H01L21/8246;H01L27/115;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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