发明名称 |
Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same |
摘要 |
A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
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申请公布号 |
US6815764(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20030388631 |
申请日期 |
2003.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE GEUM-JONG;LEE NAE-IN;KIM SANG SU;KIM KI CHUL;KIM JIN-HEE;CHO IN-WOOK;KIM SUNG-HO;KOH KWANG-WOOK |
分类号 |
H01L21/8246;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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