SEMICONDUCTOR LASER DIODE USING SELF-ALIGNMENT AND FABRICATING METHOD THEREOF, ESPECIALLY PROTECTING RIDGE AT RIDGE WAVEGUIDE

摘要

PURPOSE: A semiconductor laser diode using self-alignment and a fabricating method thereof are provided to restrict effectively leakage current by aligning a contacting side to a top side of a ridge and preventing an over-etching phenomenon of a buried layer. CONSTITUTION: A lower material layer(61) is formed on a surface of a substrate(50). A resonant layer(63) is formed on the lower material layer. An upper material layer(65) having a ridge is formed on the resonant layer. A buried layer(68) having a contact hole corresponding to a top side of the ridge is formed on the upper material layer. A protection layer(69) has an opening part corresponding to the contact hole of the buried layer and is formed with a different material from the buried layer. An upper electrode(57) is formed on the protection layer.