发明名称 Semiconductor wafer treatment by brushing before bonding
摘要 <p>Gluing of two platelets at the level of two gluing surfaces respectively comprises: (a) activation of at least one gluing surface; (b) putting the gluing surfaces into contact. The activation stage is obtained by brushing the gluing surface. An independent claim is also included for the removal of a layer of semiconducting material from a donor platelet which incorporates a stage using this method of gluing two platelets together.</p>
申请公布号 EP1473765(A2) 申请公布日期 2004.11.03
申请号 EP20040291100 申请日期 2004.04.29
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISARIAT A L'ENERGIE ATOMIQUE 发明人 MALEVILLE, CHRISTOPHE;MAUNAND, TUSSOT CORINNE;KERDILES, SEBASTIEN;RAYSSAC, OLIVIER;SCARFOGLIERE, BENJAMIN;MORICEAU, HUBERT;MORALES, CHRISTOPHE
分类号 H01L21/762;H01L21/02;H01L21/20;H01L21/304;H01L27/12;(IPC1-7):H01L21/762 主分类号 H01L21/762
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