Semiconductor wafer treatment by brushing before bonding
摘要
<p>Gluing of two platelets at the level of two gluing surfaces respectively comprises: (a) activation of at least one gluing surface; (b) putting the gluing surfaces into contact. The activation stage is obtained by brushing the gluing surface. An independent claim is also included for the removal of a layer of semiconducting material from a donor platelet which incorporates a stage using this method of gluing two platelets together.</p>
申请公布号
EP1473765(A2)
申请公布日期
2004.11.03
申请号
EP20040291100
申请日期
2004.04.29
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISARIAT A L'ENERGIE ATOMIQUE